Single-crystal quartz material is widely applied in the manufacture of resonators and sensors, but it is difficult to process because of its high hardness. A novel way to fabricate single-crystal quartz structures is proposed in this paper; the method includes quartz-on-silicon (QoS) technology and inductively coupled plasma (ICP) etching, which makes it feasible to fabricate complex structures with crystal quartz. The QoS method encompasses the bonding of silicon and quartz, followed by the thinning and polishing of quartz, which can enable the fabrication of an ultra-thin quartz wafer on silicon. In this way, instead of the conventional wet etching with hydrofluoric acid, the quartz layer can be easily etched using the ICP dry-etching method. Then, the structure of the pure quartz material is obtained by removing the silicon wafer. In addition, the silicon layer can be processed into the appropriate structure. This aspect overcomes the difficulty of processing a complex structure of single-crystal quartz with different crystal orientations. Thin single-crystal quartz wafers of Z-cut with a thickness of less than 40 μm were obtained by using this method, and a complex three-dimensional structure with an 80 μm width was also acquired by the ICP etching of the quartz wafer. The method can be applied to make both crystal-oriented quartz-based sensors and actuators, such as quartz resonant accelerometers.
Keywords: ICP etching; bonding; quartz on silicon (QoS).