Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors

Ziyuan Li; Jeffery Allen; Monica Allen; Hark Hoe Tan; Chennupati Jagadish; Lan Fu

doi:10.3390/ma13061400

Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors

Materials (Basel). 2020 Mar 19;13(6):1400. doi: 10.3390/ma13061400.

Authors

Ziyuan Li¹, Jeffery Allen², Monica Allen², Hark Hoe Tan^{1

3}, Chennupati Jagadish^{1

3}, Lan Fu^{1

3}

Affiliations

¹ Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia.
² Air Force Research Laboratory, Munitions Directorate, Eglin AFB, FL 32542, USA.
³ Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia.

Abstract

Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-based single nanowire photodetectors for infrared photodetection is reviewed and compared, including material synthesis, representative types (under different operation principles and novel concepts), and device performance, as well as their challenges and future perspectives.

Keywords: III-V semiconductor; infrared photodetector; nanowire.

Publication types

Review