Border Trap Characterizations of Al2O3/ZrO2 and Al2O3/HfO2 Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress

Md Mamunur Rahman; Dae-Hyun Kim; Tae-Woo Kim

doi:10.3390/nano10030527

Border Trap Characterizations of Al₂O₃/ZrO₂ and Al₂O₃/HfO₂ Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress

Nanomaterials (Basel). 2020 Mar 15;10(3):527. doi: 10.3390/nano10030527.

Authors

Md Mamunur Rahman^{1

2}, Dae-Hyun Kim³, Tae-Woo Kim²

Affiliations

¹ School of Science and Engineering, Department of EEE, Canadian University of Bangladesh, Dhaka 1213, Bangladesh.
² School of Electrical Engineering, University of Ulsan, Ulsan 44610, Korea.
³ School of Electronics Engineering, Kyungpook National University, Daegu 702-701, Korea.

Abstract

This study represents a comparison of the border trap behavior and reliability between HfO₂ and ZrO₂ films on n-In_0.53Ga_0.47As with an Al₂O₃ interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed and it was found that the N₂:H₂ mixed FGA passivates the border trap quite well, whereas N₂-based RTA performs better on interface traps. Al₂O₃/HfO₂ showed more degradation in terms of the threshold voltage shift while Al₂O₃/ZrO₂ showed higher leakage current behavior. Moreover, Al₂O₃/ZrO₂ showed a higher permittivity, hysteresis, and breakdown field than Al₂O₃/HfO₂.

Keywords: III–V semiconductor; atomic layer deposition; border trap; constant voltage stress; high-k; interface trap; post metal annealing.