Effects of Annealing on Characteristics of Cu2ZnSnSe4/CH3NH3PbI3/ZnS/IZO Nanostructures for Enhanced Photovoltaic Solar Cells

Chzu-Chiang Tseng; Gwomei Wu; Liann-Be Chang; Ming-Jer Jeng; Wu-Shiung Feng; Dave W Chen; Lung-Chien Chen; Kuan-Lin Lee

doi:10.3390/nano10030521

Effects of Annealing on Characteristics of Cu₂ZnSnSe₄/CH₃NH₃PbI₃/ZnS/IZO Nanostructures for Enhanced Photovoltaic Solar Cells

Nanomaterials (Basel). 2020 Mar 13;10(3):521. doi: 10.3390/nano10030521.

Authors

Chzu-Chiang Tseng^{1

2}, Gwomei Wu^{1

2}, Liann-Be Chang¹, Ming-Jer Jeng¹, Wu-Shiung Feng¹, Dave W Chen², Lung-Chien Chen³, Kuan-Lin Lee³

Affiliations

¹ Institute of Electro-Optical Engineering, Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan.
² Chang Gung Memorial Hospital, Keelung 204, Taiwan.
³ Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei 106, Taiwan.

Abstract

This paper presents new photovoltaic solar cells with Cu₂ZnSnSe₄/CH₃NH₃PbI₃(MAPbI₃)/ZnS/IZO/Ag nanostructures on bi-layer Mo/FTO (fluorine-doped tin oxide) glasssubstrates. The hole-transporting layer, active absorber layer, electron-transporting layer, transparent-conductive oxide layer, and top electrode-metal contact layer, were made of Cu₂ZnSnSe₄, MAPbI₃ perovskite, zincsulfide, indium-doped zinc oxide, and silver, respectively. The active absorber MAPbI₃ perovskite film was deposited on Cu₂ZnSnSe₄ hole-transporting layer that has been annealed at different temperatures. TheseCu₂ZnSnSe₄ filmsexhibitedthe morphology with increased crystal grain sizesand reduced pinholes, following the increased annealing temperature. When the perovskitefilm thickness was designed at 700 nm, the Cu₂ZnSnSe₄ hole-transporting layer was 160 nm, and the IZO (indium-zinc oxide) at 100 nm, and annealed at 650 °C, the experimental results showed significant improvements in the solar cell characteristics. The open-circuit voltage was increased to 1.1 V, the short-circuit current was improved to 20.8 mA/cm², and the device fill factor was elevated to 76.3%. In addition, the device power-conversion efficiency has been improved to 17.4%. The output power P_max was as good as 1.74 mW and the device series-resistance was 17.1 Ω.

Keywords: CZTSe; IZO; hole-transporting material; magnetron sputtering; perovskite.