Detection of Thermal Transport on Chip Using Gate-Induced Drain Leakage Current

Nak Won Yoo; Seoungwook Choi; Jun Yeon Yun; Young June Park

doi:10.1166/jnn.2020.17810

Detection of Thermal Transport on Chip Using Gate-Induced Drain Leakage Current

J Nanosci Nanotechnol. 2020 Aug 1;20(8):4980-4984. doi: 10.1166/jnn.2020.17810.

Authors

Nak Won Yoo¹, Seoungwook Choi¹, Jun Yeon Yun¹, Young June Park¹

Affiliation

¹ Department of Electric and Computer Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, South Korea.

PMID: 32126685
DOI: 10.1166/jnn.2020.17810

Abstract

In this paper, we propose a method to detect thermal transport suitable in nanometers scale. It is feasible using the GIDL-biased MOSFET as thermal sensor. It is because the GIDL current is occurred due to the band-to-band tunnelling of the electron in a small overlap region between gate and drain. Using the relation between the thermal transport and the thermal properties (the heat resistivity and heat capacity), we conducted two ways to heat up. By generating heat in the step and sinusoidal wave form with a transistor and observing the response at other place, we were able to estimate the speed of heat on the chip. The thermal response is measured by the GIDL current of another MOSFET. The speed of the heat generated at the MOSFET is measured about 2.12 m/s.

Publication types

Research Support, Non-U.S. Gov't