Improved Performance of Ge Solar Cell Using Graphene Quantum Dots

Yeojun Yun; Kangho Kim; Sunghyun Moon; Minhyung Lee; Jaejin Lee

doi:10.1166/jnn.2020.17780

Improved Performance of Ge Solar Cell Using Graphene Quantum Dots

J Nanosci Nanotechnol. 2020 Aug 1;20(8):4704-4707. doi: 10.1166/jnn.2020.17780.

Authors

Yeojun Yun¹, Kangho Kim¹, Sunghyun Moon¹, Minhyung Lee¹, Jaejin Lee¹

Affiliation

¹ Department of Electrical and Computer Engineering, Ajou University, Suwon 443-749, Republic of Korea.

PMID: 32126644
DOI: 10.1166/jnn.2020.17780

Abstract

We investigated the effect of graphene quantum dots (GQDs) on performance of single-junction Ge solar cell grown on (100) substrate by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Isobutylgermane (IBuGe) is used as a Ge precursor for the Ge solar cell growth. By employing GQDs, the power conversion efficiency of the Ge solar cell is improved up to 3.90% (V_oc of 0.22 V, J_sc of 28.52 mA/cm², and FF of 63.83%) through effective photon management as compared to bare Ge solar cells of 3.24% under AM 1.5G illumination.