High resolution atomic force and Kelvin probe force microscopy image data of InAs(001) surface using frequency modulation method

Young Min Park; Joon Sik Park; Choong-Heui Chung; Sangyeob Lee

doi:10.1016/j.dib.2020.105177

High resolution atomic force and Kelvin probe force microscopy image data of InAs(001) surface using frequency modulation method

Data Brief. 2020 Jan 25:29:105177. doi: 10.1016/j.dib.2020.105177. eCollection 2020 Apr.

Authors

Young Min Park¹, Joon Sik Park², Choong-Heui Chung², Sangyeob Lee²

Affiliations

¹ Surface Technology Group, Korea Institute of Industrial Technology (KITECH), Incheon, 21999, Republic of Korea.
² Department of Materials Science and Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea.

Abstract

This article provides data on the scanning tunnelling microscopy (STM), atomic force microscopy (AFM) and Kelvin probe force microscopy (KPFM) images of InAs(001) surface. Using the frequency-modulation (FM) method in AFM and KPFM, atomic resolution topography and contact potential difference (CPD) images of InAs(001) surface were obtained. The InAs(001) surface reconstruction images observed by STM and AFM are compared. The effect of AFM tip condition and tip-sample distance to AFM and KPFM imaging is verified by measuring frequency shift vs. tip-sample distance spectroscopy. This data article is related to the article entitled, "Kelvin prove force microscopy and its application" (Melitz et al., 2011) [1].

Keywords: Frequency-modulation mode Kelvin probe force microscopy; Frequency-modulation mode atomic force microscopy; InAs(001) surface; Semiconductor surface.