WS2 /MoS2 Heterostructures through Thermal Treatment of MoS2 Layers Electrostatically Functionalized with W3 S4 Molecular Clusters

Abstract

The preparation of 2D stacked layers combining flakes of different nature gives rise to countless numbers of heterostructures where new band alignments, defined at the interfaces, control the electronic properties of the system. Among the large family of 2D/2D heterostructures, the one formed by the combination of the most common semiconducting transition metal dichalcogenides, WS₂ /MoS₂ , has awakened great interest owing to its photovoltaic and photoelectrochemical properties. Solution as well as dry physical methods have been developed to optimize the synthesis of these heterostructures. Here, a suspension of negatively charged MoS₂ flakes is mixed with a methanolic solution of a cationic W₃ S₄ -core cluster, giving rise to a homogeneous distribution of the clusters over the layers. In a second step, a calcination of this molecular/2D heterostructure under N₂ leads to the formation of clean WS₂ /MoS₂ heterostructures, where the photoluminescence of both counterparts is quenched, proving an efficient interlayer coupling. Thus, this chemical method combines the advantages of a solution approach (simple, scalable, and low-cost) with the good quality interfaces reached by using more complicated traditional physical methods.

Keywords: W clusters; WS2/MoS2; heterostructures; stacked layers; transition metal dichalcogenides.