Atomic Layer Deposition for Preparing Isolated Co Sites on SiO2 for Ethane Dehydrogenation Catalysis

Renjing Huang; Yuan Cheng; Yichen Ji; Raymond J Gorte

doi:10.3390/nano10020244

Atomic Layer Deposition for Preparing Isolated Co Sites on SiO₂ for Ethane Dehydrogenation Catalysis

Nanomaterials (Basel). 2020 Jan 30;10(2):244. doi: 10.3390/nano10020244.

Authors

Renjing Huang¹, Yuan Cheng¹, Yichen Ji¹, Raymond J Gorte^{1

2

3}

Affiliations

¹ Chemical & Biomolecular Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA.
² Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA.
³ Catalysis Center for Energy Innovation, Newark, DE 19716, USA.

Abstract

Unlike Co clusters, isolated Co atoms have been shown to be selective for catalytic dehydrogenation of ethane to ethylene; however, preparation of isolated Co sites requires special preparation procedures. Here, we demonstrate that Atomic Layer Deposition (ALD) of tris(2,2,6,6-tetramethyl-3,5-heptanedionato)cobalt(III) (Co(TMHD)₃) on silica and other supports is effective in producing these isolated species. Silica-supported catalysts prepared with one ALD cycle showed ethylene selectivities greater than 96% at 923 K and were stable when CO₂ was co-fed with the ethane. Co catalysts prepared by impregnation formed clusters that were significantly less active, selective, and stable. Rates and selectivities also decreased for catalysts with multiple ALD cycles. Isolated Co catalysts prepared on Al₂O₃ and MgAl₂O₄ showed reasonable selectivity for ethane dehydrogenation but were not as effective as their silica counterpart.

Keywords: Co/SiO2; atomic layer deposition (ALD); cobalt; ethane dehydrogenation; oxidative dehydrogenation; silica; single-site catalysts.

Grants and funding

DE-SC0001004/U.S. Department of Energy