All solid-state electromagnetic pulse simulator based on the 4H-SiC photoconductive semiconductor switch

Chongbiao Luan; Juan Zhao; Longfei Xiao; Qingxi Yang; Xun Ma; Hongtao Li

doi:10.1063/1.5128450

All solid-state electromagnetic pulse simulator based on the 4H-SiC photoconductive semiconductor switch

Rev Sci Instrum. 2020 Jan 1;91(1):014701. doi: 10.1063/1.5128450.

Authors

Chongbiao Luan¹, Juan Zhao¹, Longfei Xiao², Qingxi Yang³, Xun Ma¹, Hongtao Li¹

Affiliations

¹ Key Laboratory of Pulsed Power, Institute of Fluid Physics, China Academy of Engineering Physics, P.O. Box 919-108, Mianyang 621900, China.
² State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
³ Army Engineering University, Shijiazhuang 050003, China.

PMID: 32012595
DOI: 10.1063/1.5128450

Abstract

To study the damage and protection mechanism of an electromagnetic pulse to an electronic system, an all solid-state high-voltage pulse power with photoconductive semiconductor switch is developed, which is a component of the bounded wave electromagnetic pulse simulator. The output peak voltage of the prepared all solid-state pulsed power source was 74.5 kV, the risetime was 2.05 ns, and the pulse width was 22 ns. In addition, the peak voltage of the output pulse of the all solid-state pulsed power source could be regulated. The all solid-state electromagnetic pulse simulator developed in this work can generate an electromagnetic environment with a risetime of 2.2 ns and a pulse width of 23.5 ns.