Analysis of Channel Area Fluctuation Effects of Gate-All-Around Tunnel Field-Effect Transistor

Seok Jung Kang; Jeong-Uk Park; Kyung Jin Rim; Yoon Kim; Jang Hyun Kim; Garam Kim; Sangwan Kim

doi:10.1166/jnn.2020.17792

Analysis of Channel Area Fluctuation Effects of Gate-All-Around Tunnel Field-Effect Transistor

J Nanosci Nanotechnol. 2020 Jul 1;20(7):4409-4413. doi: 10.1166/jnn.2020.17792.

Authors

Seok Jung Kang¹, Jeong-Uk Park¹, Kyung Jin Rim¹, Yoon Kim², Jang Hyun Kim³, Garam Kim⁴, Sangwan Kim¹

Affiliations

¹ Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Republic of Korea.
² School of Electrical and Computer Engineering, University of Seoul, Seoul 02504, Republic of South Korea.
³ Inter-University Semiconductor Research Center (ISRC), Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea.
⁴ Department of Electronic Engineering, Myongji University, Yongin 17058, Republic of Korea.

PMID: 31968485
DOI: 10.1166/jnn.2020.17792

Abstract

In this manuscript, channel area fluctuation (CAF) effects on turn-on voltage (V_on) and subthreshold swing (SS) in gate-all-around (GAA) nanowire (NW) tunnel field-effect transistor (TFET) with multi-bridge-channel (MBC) have been investigated for the first time. These variations occur because oblique etching slope makes various elliptical-shaped channels in MBC-TFET. Since TFET is promising candidates to succeed metal-oxide-semiconductor FETs (MOSFET), these variation effects have been compared to MOSFET. Furthermore, Ge homojunction TFET, one of the solutions to increase on-state current in TFET and improve SS also has been simulated using technology computer-aided design (TCAD) simulation. The results would be worth reference for future study about GAA NW TFETs.