I-Shaped SiGe Fin Tunnel Field-Effect Transistor with High ION/ IOFF Ratio

Ryoongbin Lee; Junil Lee; Kitae Lee; Soyoun Kim; Sihyun Kim; Sangwan Kim; Byung-Gook Park

doi:10.1166/jnn.2020.17794

I-Shaped SiGe Fin Tunnel Field-Effect Transistor with High I_ON/ I_OFF Ratio

J Nanosci Nanotechnol. 2020 Jul 1;20(7):4298-4302. doi: 10.1166/jnn.2020.17794.

Authors

Ryoongbin Lee¹, Junil Lee¹, Kitae Lee¹, Soyoun Kim¹, Sihyun Kim¹, Sangwan Kim², Byung-Gook Park¹

Affiliations

¹ Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea.
² Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Republic of Korea.

PMID: 31968461
DOI: 10.1166/jnn.2020.17794

Abstract

In this paper, we propose an I-shaped SiGe fin tunnel field-effect transistor (TFET) and use technology computer aided design (TCAD) simulations to verify the validity. Compared to conventional Fin TFET on the same footprint, a 27% increase in the effective channel width can be obtained with the proposed TFET. The proposed Fin TFET was confirmed to have 300% boosted on-current (I _on), 25% reduced subthreshold swing (SS), and 52% lower off-current (I _off) than conventional Fin TFET through TCAD simulation results. These performance improvements are attributed to increased effective channel width and enhanced gate controllability of the I-shaped fin structure. Furthermore, the fabrication process of forming an I-shaped SiGe fin is also presented using the SiGe wet etch. By optimizing the Ge condensation process, an I-shaped SiGe fin with a Ge ratio greater than 50% can be obtained.