Poly(4-vinylphenol-co-methyl methacrylate)/Hafnium Oxide Nanocomposite Gate Insulators for Organic Thin-Film Transistors

Shang Hao Piao; Hyeonju Lee; Jaehoon Park; Hyoung Jin Choi

doi:10.1166/jnn.2020.17567

Poly(4-vinylphenol-co-methyl methacrylate)/Hafnium Oxide Nanocomposite Gate Insulators for Organic Thin-Film Transistors

J Nanosci Nanotechnol. 2020 Jul 1;20(7):4188-4192. doi: 10.1166/jnn.2020.17567.

Authors

Shang Hao Piao¹, Hyeonju Lee², Jaehoon Park², Hyoung Jin Choi¹

Affiliations

¹ Department of Polymer Science and Engineering, Inha University, Incheon 22212, Korea.
² Department of Electronic Engineering, Hallym University, Chuncheon 24252, Korea.

PMID: 31968439
DOI: 10.1166/jnn.2020.17567

Abstract

We fabricate 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-Pn) thin-film transistors (TFTs) with nanocomposite insulators. The insulator layers consist of both poly(4-vinylphenol-co-methyl methacrylate) and high-dielectric constant hafnium oxide (HfO₂) nanoparticles. The HfO₂ nanoparticles are ball-milled for sufficient dispersion in a nanocomposite solution to enable solution process methods to be used in preparing the insulator layers. The nanocomposite insulators demonstrate high capacitances and improve the performance of TIPS-Pn TFTs. Nonetheless, particle aggregates are produced in the nanocomposites solution with high HfO₂ concentrations, generating detrimental effects on the dielectric properties and the TFT performance. Our experimental result implies that the optimum concentration of HfO₂ nanoparticles in a mixed solution will find to be ~11.5 wt%.