Electrical and Thermal Performances of Omega-Shaped-Gate Nanowire Field Effect Transistors for Low Power Operation

Young Suh Song; Sungmin Hwang; Kyung Kyu Min; Taejin Jang; Yunho Choi; Junsu Yu; Jong-Ho Lee; Byung-Gook Park

doi:10.1166/jnn.2020.17787

Electrical and Thermal Performances of Omega-Shaped-Gate Nanowire Field Effect Transistors for Low Power Operation

J Nanosci Nanotechnol. 2020 Jul 1;20(7):4092-4096. doi: 10.1166/jnn.2020.17787.

Authors

Young Suh Song¹, Sungmin Hwang¹, Kyung Kyu Min¹, Taejin Jang¹, Yunho Choi¹, Junsu Yu¹, Jong-Ho Lee¹, Byung-Gook Park¹

Affiliation

¹ Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-742, Republic of Korea.

PMID: 31968425
DOI: 10.1166/jnn.2020.17787

Abstract

In this paper, we proposed Omega-Shaped-Gate Nanowire Field Effect Transistor (ONWFET) with different gate coverage ratio (GCR). In order to investigate electrical and self-heating characteristics of the proposed devices, on-current, off-current, subthreshold swing (SS), and operating temperature were examined by using 3D TCAD simulator and compared with nanowire MOSFET (NW-MOSFET). As a result, a possibility of reducing off-current and operating temperature was demonstrated by using the ONWFET with 40% GCR. Therefore, the ONWFET can save power consumption and serve as low power application such as battery-powered portable electronic devices.