In this work, parametric investigations on structural optimization are systematically made for 4H-SiC-based separated absorption charge and multiplication (SACM) avalanche ultraviolet photodiode (UV APD). According to our results, the breakdown voltage can be strongly affected by the thickness for the multiplication layer and the doping concentration for the charge control layer. The thickness for the n-type ohmic contact layer, the absorption layer, and the charge control layer can remarkably affect the light penetration depth, which correspondingly influences the number of photo-generated electron-hole pairs, and therefore the aforementioned layer thickness has a strong impact on the responsivity for SACM APD. For enhancing the responsivity of the APD, we require a reduced energy band barrier height at the interface of the optical absorption layer and the charge control layer, so that the promoted carrier transport into the multiplication layer can be favored. In addition, we investigate positive beveled mesas with smaller angles so as to reduce the electric field at the mesa edge. Thus, the dark current is correspondingly suppressed.
Keywords: 4H-SiC; Avalanche photodiode (APD); Breakdown voltage; Dark current; Responsivity; Separated absorption charge and multiplication (SACM).