Pulsed-laser testing is an attractive tool for studying space-based radiation effects in microelectronics because it provides a high degree of spatial resolution and is more cost-effective than conventional accelerator-based testing. However, quantitatively predicting the effects of radiation is challenging for this optical method. A new approach to pulsed-laser testing is presented, which addresses these challenges by using a Bessel beam and carrier generation via two-photon absorption. By producing a carrier distribution in the device under test that is similar to that of a heavy ion, this optical approach aims to quantitatively predict the response of the device under heavy ion tests that represent space radiation. Furthermore, the carrier distribution can be accurately described using a single analytic expression thereby enabling the laser to be tuned to emulate a specific heavy ion. Herein, we describe the modifications made to an existing pulsed-laser setup to generate this carrier distribution, characterize this distribution using a novel method that provides sub-micron spatial resolution, and provide the equations that describe the distribution. Finally, we use this method to study a silicon photodiode and find that the transient response of the device shows strong agreement with the response generated using heavy ions.