Fast Response Solar-Blind Photodetector with a Quasi-Zener Tunneling Effect Based on Amorphous In-Doped Ga2O3 Thin Films

Mingzhi Fang; Weiguo Zhao; Feifei Li; Deliang Zhu; Shun Han; Wangying Xu; Wenjun Liu; Peijiang Cao; Ming Fang; Youming Lu

doi:10.3390/s20010129

Fast Response Solar-Blind Photodetector with a Quasi-Zener Tunneling Effect Based on Amorphous In-Doped Ga₂O₃ Thin Films

Sensors (Basel). 2019 Dec 24;20(1):129. doi: 10.3390/s20010129.

Authors

Affiliation

¹ Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China.

Abstract

A high-performance solar-blind photodetector with a metal-semiconductor-metal structure was fabricated based on amorphous In-doped Ga₂O₃ thin films prepared at room temperature by radio frequency magnetron sputtering. The photodetector shows a high responsivity (18.06 A/W) at 235 nm with a fast rise time (4.9 μs) and a rapid decay time (230 μs). The detection range was broadened compared with an individual Ga₂O₃ photodetector because of In doping. In addition, the uneven In distribution at different areas in the film results in different resistances, which causes a quasi-Zener tunneling internal gain mechanism. The quasi-Zener tunneling internal gain mechanism has a positive impact on the fast response speed and high responsivity.

Keywords: amorphous InGaO thin films; fast response; quasi-Zener tunneling effect; solar-blind photodetector.

Abstract

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