Correction: Park, J.; et al. Fine-Grained Power Gating Using an MRAM-CMOS Non-Volatile Flip-Flop. Micromachines 2019, 10, 411

Jaeyoung Park; Young Uk Yim

doi:10.3390/mi11010011

Correction: Park, J.; et al. Fine-Grained Power Gating Using an MRAM-CMOS Non-Volatile Flip-Flop. Micromachines 2019, 10, 411

Micromachines (Basel). 2019 Dec 19;11(1):11. doi: 10.3390/mi11010011.

Authors

Jaeyoung Park¹, Young Uk Yim¹

Affiliation

¹ School of Computer Science and Electrical Engineering, Handong Global University, Pohang-si 37554, Korea.

Abstract

As this research is a personal achievement with no company-related information, and there is no financial support for this paper from Qualcomm Technologies Inc [...].

Publication types

Published Erratum