Near-Infrared Photoelectric Properties of Multilayer Bi2O2Se Nanofilms

Hang Yang; Wei Chen; Xiaoming Zheng; Dongsheng Yang; Yuze Hu; Xiangzhe Zhang; Xin Ye; Yi Zhang; Tian Jiang; Gang Peng; Xueao Zhang; Renyan Zhang; Chuyun Deng; Shiqiao Qin

doi:10.1186/s11671-019-3179-4

Near-Infrared Photoelectric Properties of Multilayer Bi₂O₂Se Nanofilms

Nanoscale Res Lett. 2019 Dec 9;14(1):371. doi: 10.1186/s11671-019-3179-4.

Authors

Hang Yang¹, Wei Chen², Xiaoming Zheng¹, Dongsheng Yang², Yuze Hu², Xiangzhe Zhang², Xin Ye³, Yi Zhang¹, Tian Jiang², Gang Peng¹, Xueao Zhang⁴, Renyan Zhang⁵, Chuyun Deng⁶, Shiqiao Qin²

Affiliations

¹ College of Arts and Science, National University of Defense Technology, Changsha, 410073, China.
² College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China.
³ Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore.
⁴ College of Physical Science and Technology, Xiamen University, Xiamen, 361005, China. xazhang@xmu.edu.cn.
⁵ College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China. ryancms@sina.cn.
⁶ College of Arts and Science, National University of Defense Technology, Changsha, 410073, China. dengchuyun@nudt.edu.cn.

Abstract

The near-infrared (NIR) photoelectric properties of multilayer Bi₂O₂Se nanofilms were systematically studied in this paper. Multilayer Bi₂O₂Se nanofilms demonstrate a sensitive photo response to NIR, including a high photoresponsivity (~ 101 A/W), a quick response time (~ 30 ms), a high external quantum efficiency (~ 20,300%), and a high detection rate (1.9 × 10¹⁰ Jones). These results show that the device based on multilayer Bi₂O₂Se nanofilms might have great potentials for future applications in ultrafast, highly sensitive NIR optoelectronic devices.

Keywords: Bi2O2Se; Multilayer; Near-Infrared; Photodetector.

Abstract

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