Texturization tuning is of crucial significance for designing and developing high-performance thermoelectric materials and devices. Here, we report for the first time that a strong texturization effect induces an in-plane high-performance thermoelectric and an out-of-plane low lattice thermal conductivity in Sb-substituted misfit-layered (SnS)1.2(TiS2)2 alloys. In the in-plane direction, the oriented texture promotes a high carrier mobility, contributing to the maximization of the power factor (∼0.90 mW K-2 m-1). Moreover, the in-plane lattice thermal conductivity dramatically reduces deriving from the point defects due to the Sb substitution and weakened transverse sound velocity owing to the softening of bonding, ultimately leading to one of the highest thermoelectric performances ever reported among misfit-layered chalcogenides. In particular, in the out-of-plane direction, the texturization triggers the lowest lattice thermal conductivity (∼0.39 W K-1 m-1), exceeding the theoretical limit of the Debye-Cahill model, which provides a precious opportunity to investigate this real Sb-substituted (SnS)1.2(TiS2)2 material. The present finding in misfit-layered chalcogenides provides a novel strategy for manipulating thermoelectrics via texturization engineering.
Keywords: Sb substitution; low lattice thermal conductivity; misfit-layered chalcogenides; texturization; thermoelectric.