The nitrogen-vacancy (NV) color center in chemical vapor deposition (CVD) diamond has been widely investigated in quantum information and quantum biosensors due to its excellent photon emission stability and long spin coherence time. However, the temperature dependence of the energy level of NV color centers in diamond is different from other semiconductors with the same diamond cubic structure for the high Debye temperature and very small thermal expansion coefficient of diamond. In this work, a diamond sensor for temperature measurement with high precision was fabricated based on the investigation of the energy level shifts of NV centers by Raman and photoluminescence (PL) spectra. The results show that the intensity and linewidth of the zero-phonon line of NV centers highly depend on the environmental temperature, and the energy level shifts of NV centers in diamond follow the modified Varshni model very well, a model which is better than the traditional version. Accordingly, the NV color center shows the ability in temperature measurement with a high accuracy of up to 98%. The high dependence of NV centers on environmental temperature shows the possibility of temperature monitoring of NV center-based quantum sensors in biosystems.
Keywords: diamond temperature sensor; energy level shifts; modified Varshni model; nitrogen-vacancy (NV) color center; temperature dependence; zero-phonon line (ZPL).