Simple construction of deep-red hexaazatrinaphthylene-based thermally activated delayed fluorescence emitters for efficient solution-processed OLEDs with a peak at 692 nm

Xue Zhou; Yepeng Xiang; Shaolong Gong; Zhanxiang Chen; Fan Ni; Guohua Xie; Chuluo Yang

doi:10.1039/c9cc06804j

Simple construction of deep-red hexaazatrinaphthylene-based thermally activated delayed fluorescence emitters for efficient solution-processed OLEDs with a peak at 692 nm

Chem Commun (Camb). 2019 Dec 7;55(94):14190-14193. doi: 10.1039/c9cc06804j. Epub 2019 Nov 8.

Authors

Xue Zhou¹, Yepeng Xiang², Shaolong Gong², Zhanxiang Chen², Fan Ni³, Guohua Xie², Chuluo Yang¹

Affiliations

¹ Shenzhen Key Laboratory of Polymer Science and Technology, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China. clyang@whu.edu.cn and Hubei Key Lab on Organic and Polymeric Optoelectronic Materials, Department of Chemistry, Wuhan University, Wuhan, 430072, People's Republic of China. slgong@whu.edu.cn.
² Hubei Key Lab on Organic and Polymeric Optoelectronic Materials, Department of Chemistry, Wuhan University, Wuhan, 430072, People's Republic of China. slgong@whu.edu.cn.
³ Shenzhen Key Laboratory of Polymer Science and Technology, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China. clyang@whu.edu.cn.

PMID: 31701968
DOI: 10.1039/c9cc06804j

Abstract

Two solution-processable deep-red thermally activated delayed fluorescence emitters based on a 5,6,11,12,17,18-hexaazatrinaphthylene acceptor core were developed through a simple and catalyst-free nucleophilic substitution reaction. The solution-processed OLEDs using these emitters achieved a peak external quantum efficiency of 4.8% with the emission peak at 692 nm.