Dielectric metasurfaces made from crystalline silicon, titanium dioxide, gallium nitride and silicon nitride have developed rapidly for applications in the visible wavelength regime. High performance metasurfaces typically require the realisation of subwavelength, high aspect ratio nanostructures, the fabrication of which can be challenging. Here, we propose and demonstrate the operation of high performance metasurfaces in ultra-thin (100 nm) crystalline silicon at the wavelength of 532 nm. Using optical beam analysis, we discuss fabrication complexity and show that our approach is more fabrication-tolerant than the nanofin approach, which has so far produced the highest performance metasurfaces, but may be difficult to manufacture, especially when using nanoimprint lithography.