Non-zero-crossing current-voltage hysteresis behavior induced by capacitive effects in bio-memristor

Shouhui Zhu; Guangdong Zhou; Weiyong Yuan; Shuangsuo Mao; Feng Yang; Guoqiang Fu; Bai Sun

doi:10.1016/j.jcis.2019.10.087

Non-zero-crossing current-voltage hysteresis behavior induced by capacitive effects in bio-memristor

J Colloid Interface Sci. 2020 Feb 15:560:565-571. doi: 10.1016/j.jcis.2019.10.087. Epub 2019 Oct 24.

Authors

Shouhui Zhu¹, Guangdong Zhou², Weiyong Yuan², Shuangsuo Mao³, Feng Yang⁴, Guoqiang Fu⁵, Bai Sun⁶

Affiliations

¹ School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China. Electronic address: shzhu@my.swjtu.edu.cn.
² Institute for Clean Energy & Advanced Materials (ICEAM), Southwest University, Chongqing 400715, China.
³ School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China.
⁴ Superconductivity and New Energy R&D Center (SNERDC), Southwest Jiaotong University, Chengdu 610031, China.
⁵ Department of Electromechanical Measuring and Controlling, School of Mechanical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, China.
⁶ School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China; Superconductivity and New Energy R&D Center (SNERDC), Southwest Jiaotong University, Chengdu 610031, China; Waterloo Institute for Nanotechnology, Centre for Advanced Materials Joining, Department of Mechanics and Mechatronics Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada. Electronic address: bsun@swjtu.edu.cn.

PMID: 31679778
DOI: 10.1016/j.jcis.2019.10.087

Abstract

Capacitive devices have drawn a beautiful application scene in electronic device systems ranging from touch sensors, energy storages and multifunction transistors, but serving as memristive term is still blank. Sweet potato peel (SPP) as function layer was employed to develop the memristive device with Ag/SPP/F-doped SnO₂ (FTO) structure. A current-voltage (I-V) hysteresis, which is characterized by a typical capacitive behavior, is impressively observed in the developed device. Nonvolatile data storage is feasible using the non-zero-crossing I-V hysteresis because the resistance states can be well maintained. Charge transfer at the Ag/SPP and SPP/FTO interfaces, and the interplay between Ag⁺ ions and charges are responsible for this non-zero-crossing I-V hysteresis behaviors. This work possibly gives an insight into the data storage in terms of a new conception electronic device based on environment-friendly material.

Keywords: Bio-electronic device; Bio-memristor; Capacitive effects; Current-voltage hysteresis; Non-zero-crossing.

MeSH terms

Electric Impedance*
Electron Transport
Electronics
Equipment Design
Fluorine / chemistry*
Ipomoea batatas / chemistry*
Silver / chemistry*
Tin Compounds / chemistry*

Substances

Tin Compounds
Fluorine
Silver