Low-Energy-Consumption Three-Valued Memory Device Inspired by Solid-State Batteries

Yuki Watanabe; Shigeru Kobayashi; Issei Sugiyama; Kazunori Nishio; Wei Liu; Satoshi Watanabe; Ryota Shimizu; Taro Hitosugi

doi:10.1021/acsami.9b15366

Low-Energy-Consumption Three-Valued Memory Device Inspired by Solid-State Batteries

ACS Appl Mater Interfaces. 2019 Dec 4;11(48):45150-45154. doi: 10.1021/acsami.9b15366. Epub 2019 Nov 15.

Authors

Yuki Watanabe¹, Shigeru Kobayashi¹, Issei Sugiyama¹, Kazunori Nishio¹, Wei Liu², Satoshi Watanabe², Ryota Shimizu^{1

3}, Taro Hitosugi¹

Affiliations

¹ School of Materials and Chemical Technology , Tokyo Institute of Technology , 2-12-1 Ookayama , Meguro , Tokyo 152-8550 , Japan.
² Department of Materials Engineering , The University of Tokyo , 7-3-1 Hongo , Bunkyo , Tokyo 113-8656 , Japan.
³ PRESTO, Japan Science and Technology Agency , 4-1-8 Honcho , Kawaguchi , Saitama 332-0012 , Japan.

PMID: 31651152
DOI: 10.1021/acsami.9b15366

Abstract

We report the creation of a low-energy-consumption three-valued memory device based on the switching of open-circuit voltages. This device consists of a stack of Li, Li₃PO₄ solid electrolyte, and Ni electrode films. We observed reversible voltage switching between high, intermediate, and low open-circuit voltages. According to the scaling law, the energy required to switch a device is estimated to be 8.8 × 10^-11 J/μm² and this value is almost 1/50 of that of a typical dynamic random access memory. Both the high- and low-voltage states converged to the intermediate-voltage state, indicating that the intermediate-voltage state is the most stable metastable state.

Keywords: film lithium battery; lithium ion dynamics; memory device; open-circuit voltage; surface coverage.