Piezotronic Effect Modulated Flexible AlGaN/GaN High-Electron-Mobility Transistors

Jiyuan Zhu; Xingyu Zhou; Liang Jing; Qilin Hua; Weiguo Hu; Zhong Lin Wang

doi:10.1021/acsnano.9b05999

Piezotronic Effect Modulated Flexible AlGaN/GaN High-Electron-Mobility Transistors

ACS Nano. 2019 Nov 26;13(11):13161-13168. doi: 10.1021/acsnano.9b05999. Epub 2019 Oct 24.

Authors

Jiyuan Zhu^{1

2}, Xingyu Zhou^{1

2}, Liang Jing^{1

2}, Qilin Hua^{1

2

3}, Weiguo Hu^{1

2

3}, Zhong Lin Wang^{1

2

3

4}

Affiliations

¹ CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , China.
² School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , China.
³ Center on Nanoenergy Research, School of Physical Science and Technology , Guangxi University , Nanning 530004 , China.
⁴ School of Materials Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332-0245 , United States.

PMID: 31633906
DOI: 10.1021/acsnano.9b05999

Abstract

Flexible electronic technology has attracted great attention due to its wide range of potential applications in the fields of healthcare, robotics, and artificial intelligence, etc. In this work, we have successfully fabricated flexible AlGaN/GaN high-electron-mobility transistors (HEMTs) arrays through a low-damage and wafer-scale substrate transfer technology from a rigid Si substrate. The flexible AlGaN/GaN HEMTs have excellent electrical performances with the I_d,max achieving 290 mA/mm at V_gs = +2 V and the g_m,max reaching to 40 mS/mm. The piezotronic effect provides a different freedom to optimize device performances, and flexible HEMTs can endure the larger mechanical distortions. Based on the piezotronic effect, we applied an external stress to significantly modulate the electrical performances of flexible HEMTs. The piezotronic effect modulated flexible AlGaN/GaN HEMTs exhibit great potential in human-machine interface, intelligent microinductor systems, and active sensors, etc, and introduce an opportunity to sensing or feedback external mechanical stimuli and so on.

Keywords: AlGaN/GaN high-electron-mobility transistors; flexible substrate; piezotronic effect; two-dimensional electron gas; wafer-scale.