Central to the use of Ge-Sb-Te based phase-change materials for data storage applications is their crystallization capability since it determines memory writing time. Although being intensively studied to identify intrinsic limits and develop strategies to enhance memory performance, the crystallization process in these materials is still not fully explored. Therefore, this study focuses on the determination of crystal growth dynamics in an epitaxial phase-change material thin film model system offering the advantage of high crystalline quality and application-relevant sizing. By introducing a method that combines time-resolved reflectivity measurements with high-resolution scanning transmission electron microscopy, crystal growth velocities upon fast cooling after single ns-laser pulse irradiation of the prototypical phase-change material Ge2Sb2Te5 are determined. As a result, an increase in crystal growth velocity from 0.4 to 1.7 m/s with increasing laser fluence is observed with a maximum rate of 1.7 m/s as the upper detectable limit of the studied material.
Keywords: Ge2Sb2Te5; crystal growth velocity; epitaxial phase-change materials; multilevel data storage; ns-laser switching.