Rb10Zn4Sn4S17: A Chalcogenide with Large Laser Damage Threshold Improved from the Mn-Based Analogue

Jun Zhao; Dajiang Mei; Yi Yang; Wangzhu Cao; Chuang Liu; Yuandong Wu; Zheshuai Lin

doi:10.1021/acs.inorgchem.9b02481

Rb₁₀Zn₄Sn₄S₁₇: A Chalcogenide with Large Laser Damage Threshold Improved from the Mn-Based Analogue

Inorg Chem. 2019 Nov 18;58(22):15029-15033. doi: 10.1021/acs.inorgchem.9b02481. Epub 2019 Oct 14.

Authors

Jun Zhao¹, Dajiang Mei¹, Yi Yang^{2

3}, Wangzhu Cao¹, Chuang Liu¹, Yuandong Wu¹, Zheshuai Lin^{2

3}

Affiliations

¹ College of Chemistry and Chemical Engineering , Shanghai University of Engineering Science , Shanghai 201620 , China.
² Technical Institute of Physics and Chemistry , Chinese Academy of Sciences , Beijing 100190 , China.
³ University of Chinese Academy of Sciences , Beijing 100190 , China.

PMID: 31608626
DOI: 10.1021/acs.inorgchem.9b02481

Abstract

In the military and civilian fields, with the development of new technologies, high-powered nonlinear optical (NLO) crystals demonstrate broad application prospects. In this work, for purposes of designing a better NLO material, a new chalcogenide Rb₁₀Zn₄Sn₄S₁₇ was successfully designed with a high temperature solid-state method on the basis of previously reported compound Sr₃MnSn₂S₈. The experimental results indicate that Rb₁₀Zn₄Sn₄S₁₇ possesses a prominent band gap of 3.59 eV, compared with the laser damage threshold (LDT) of Sr₃MnSn₂S₈ (3 times that of AgGaS₂); Rb₁₀Zn₄Sn₄S₁₇ shows an outstanding LDT about 5 times that of AgGaS₂. Meanwhile, it has an ideal second harmonic generation (SHG) response approximately 0.7 times that of AgGaS₂.