The field of neuromorphic computing systems has been through enormous progress in recent years, whereas some issues are still remaining to be solved. One of the biggest challenges in neuromorphic circuit designing is the lack of a robust device with functions comparable to or even better than the metal-oxide-semiconductor field-effect transistor (MOSFET) used in traditional integrated circuits. In this work, we demonstrated a MoS2 neuristor using a dual-gate transistor structure. An ionic top gate is designed to control the migration of ions, while an electronic back gate is used to control electronic migration. By applying different driving signals, the MoS2 neuristor can be programmed as a neuron, a synapse, or an n-type MOSFET, which can be seen as a fundamental building block in the neuromorphic circuit design. The MoS2 neuristor provides viable solutions for future reconfigurable neuromorphic systems and can be a promising candidate for future neuromorphic computing.
Keywords: 2D material; dual-gate; ionic gating; neuristor; neuromorphic computing; synaptic plasticity.