An in situ particle monitor (ISPM) was developed to measure the concentration of several hundred nanosized contaminant particles generated from the semiconductor process. It is difficult to measure particles below 300 nm owing to low sensitivity and reliability. To improve the sensitivity and reduce the uncertainty caused by the Gaussian distribution of laser, a beam homogenizing module was applied to transform the Gaussian beam into a flat-top beam by total internal reflection. The performance of the beam-homogenizing ISPM was evaluated by measuring standard polystyrene latex particles in vacuum. We analyzed the measurement efficiency by a comparative evaluation with a scanning mobility particle sizer. Following this, the count of particles generated from the exhaust line of a plasma-enhanced chemical vapor deposition process was measured for real-time process diagnosis.