Spin transfer nano-oscillators (STNOs) are a new type of radio frequency (RF) oscillators that utilize the current-induced magnetization precession in a magnetic tunnel junction device to generate high frequency microwave signal. Since both the frequency and the amplitude of STNOs can be tuned by changing the current, they are potentially used for amplitude shift keying and frequency shift keying modulation without the need for an RF mixer, which leads to compact RF components. In this letter, a novel strategy is proposed to modulate the frequency and the amplitude by memristor-controlled spin nano-oscillators, whereby the STNO is responsible for microwave emitting and memristor serves as a current regulator which further modulates the frequency and amplitude. In addition, the I-V curves show that a multilevel resistance behavior can also be achieved in the same architecture.