Ultra-thin Ga nanosheets: analogues of high pressure Ga(iii)

Yaqi Li; Jingwei Zhang; Fanxing Yin; Yuqing Wang; Haifeng Feng; Si Zhou; Yi Du

doi:10.1039/c9nr05597e

Ultra-thin Ga nanosheets: analogues of high pressure Ga(iii)

Nanoscale. 2019 Oct 7;11(37):17201-17205. doi: 10.1039/c9nr05597e. Epub 2019 Sep 17.

Authors

Yaqi Li¹, Jingwei Zhang¹, Fanxing Yin¹, Yuqing Wang¹, Haifeng Feng², Si Zhou³, Yi Du²

Affiliations

¹ School of Physics, Beihang University, Beijing 100191, P. R. China.
² School of Physics, Beihang University, Beijing 100191, P. R. China and BUAA-UOW Joint Research Centre, Beihang University, Beijing 100191, P. R. China. ydu@uow.edu.au haifeng@uow.edu.au and Institute for Superconducting and Electronic Materials (ISEM), Australian Institute for Innovative Materials (AIIM), University of Wollongong, Wollongong, NSW 2500, Australia.
³ Institute for Superconducting and Electronic Materials (ISEM), Australian Institute for Innovative Materials (AIIM), University of Wollongong, Wollongong, NSW 2500, Australia.

PMID: 31528941
DOI: 10.1039/c9nr05597e

Abstract

Ultra-thin Ga islands of β-Ga(110), high-pressure phase Ga(iii) and a new phase of stripe superstructure are obtained on Si(111). STM combined with theoretical calculations suggests that the stripe superstructure originates from Ga(iii) (001) with stacking rearrangement. This work provides a new strategy for synthesizing low-dimensional nanomaterials and accessing high pressure phases.