The electrocaloric effect in ferroelectric materials has drawn much attention due to its potential applications in integrated circuit cooling and novel cooling devices. In contrast to the widely researched positive electrocaloric effect, the negative electrocaloric effect has received much less attention due to the lack of any effective methods for significant enhancement. In this work, we fabricated PbZrO3 thin film on a Pt/Si substrate by the sol-gel method. By controlling the interface conditions between the thin film and substrate, we induced defects into the interface and stabilized a transient ferroelectric phase in the PbZrO3 thin film. The emergence of the transient ferroelectric phase postpones the antiferroelectric-ferroelectric phase transition. As a result, a negative electrocaloric effect up to -18.5 K is estimated near room temperature, the highest one ever reported in this temperature range. This result suggests a new strategy to enhance the negative electrocaloric effect and may benefit the application of PbZrO3 thin films in cooling devices.
Keywords: PbZrO3; antiferroelectric; interface engineering; negative electrocaloric effect; thin films.