Unconventional Temperature Dependence of the Anomalous Hall Effect in HgCr_{2}Se_{4}

Shuai Yang; Zhilin Li; Chaojing Lin; Changjiang Yi; Youguo Shi; Dimitrie Culcer; Yongqing Li

doi:10.1103/PhysRevLett.123.096601

Unconventional Temperature Dependence of the Anomalous Hall Effect in HgCr_{2}Se_{4}

Phys Rev Lett. 2019 Aug 30;123(9):096601. doi: 10.1103/PhysRevLett.123.096601.

Authors

Shuai Yang^{1

2}, Zhilin Li^{1

3}, Chaojing Lin^{1

2}, Changjiang Yi^{1

2}, Youguo Shi^{1

2}, Dimitrie Culcer^{4

5}, Yongqing Li^{1

2

6

7}

Affiliations

¹ Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
² School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China.
³ State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Beijing Key Laboratory of Quantum Devices, Peking University, Beijing 100871, China.
⁴ School of Physics, University of New South Wales, Sydney 2052, Australia.
⁵ ARC Centre of Excellence in Future Low-Energy Electronics Technologies, UNSW Node, Sydney 2052, Australia.
⁶ Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China.
⁷ CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China.

PMID: 31524447
DOI: 10.1103/PhysRevLett.123.096601

Abstract

At sufficiently low temperatures, many quantum effects, such as weak localization, electron-electron interaction (EEI), and Kondo screening, can lead to pronounced corrections to the semiclassical electron transport. Although low temperature corrections to longitudinal resistivity, ordinary Hall resistivity, or anomalous Hall (AH) resistivity are often observed, the corrections to three of them have never been simultaneously detected in a single sample. Here, we report on the observation of sqrt[T]-type temperature dependences of the longitudinal, ordinary Hall and AH resistivities at temperatures down to at least 20 mK in n-type HgCr_{2}Se_{4}, a half-metallic ferromagnetic semiconductor that can reach extremely low carrier densities. For the samples with moderate disorder, the longitudinal and ordinary Hall conductivities can be satisfactorily described by the EEI theory developed by Altshuler et al., whereas the large corrections to AH conductivity are inconsistent with the existing theory, which predicts vanishing and finite corrections to AH conductivity for EEI and weak localization, respectively.