Effect of SiC nano-size fillers on the aging resistance of XLPE insulation: A first-principles study

Hui Zhang; Yang Liu; Xia Du; Xuan Wang; Xiaonan Zheng; Zesheng Li

doi:10.1016/j.jmgm.2019.107438

Effect of SiC nano-size fillers on the aging resistance of XLPE insulation: A first-principles study

J Mol Graph Model. 2019 Dec:93:107438. doi: 10.1016/j.jmgm.2019.107438. Epub 2019 Aug 22.

Authors

Hui Zhang¹, Yang Liu², Xia Du³, Xuan Wang⁴, Xiaonan Zheng⁵, Zesheng Li⁶

Affiliations

¹ Key Laboratory of Engineering Dielectrics and Its Application of Ministry of Education, China; College of Chemical and Environmental Engineering, Harbin University of Science and Technology, Harbin, 150080, China. Electronic address: hust_zhanghui11@hotmail.com.
² School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, 150080, China. Electronic address: yang.liu@hit.edu.cn.
³ College of Chemical and Environmental Engineering, Harbin University of Science and Technology, Harbin, 150080, China.
⁴ Key Laboratory of Engineering Dielectrics and Its Application of Ministry of Education, China.
⁵ School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, 150080, China.
⁶ Key Laboratory of Cluster Science of Ministry of Education and School of Chemistry, Beijing Institute of Technology, Beijing, 100081, China.

PMID: 31521881
DOI: 10.1016/j.jmgm.2019.107438

Abstract

Effective strategies to prevent the electrical tree growth and extend the lifetime of cross-linked polyethylene (XLPE) insulation are of crucial importance for the development of power cable industry. The first-principles study with DFT method was performed to understand the mechanism of aging resistance for SiC/XLPE nanocomposite. The Bader charge redistribution calculations between different types of silicon carbide and XLPE suggest that SiC fillers have the ability of capturing hot electrons to suppress the accumulation of space charges because of their unsaturated electronic structures and magnetism on the Si- or C-terminated surfaces. The interfacial behavior between SiC and XLPE was investigated based on the physical interaction and chemical reactivity. The 3C, 4H and 6H-type SiC with flat Si-terminated surfaces are proposed to be favorable additives by showing relatively strong physical interaction with XLPE to limit its movement, and high activation energy for the hydrogen migration reaction to protect the XLPE.

Keywords: Aging resistance; DFT; SiC filler; XLPE.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Carbon Compounds, Inorganic / chemistry*
Electrons
Nanocomposites / chemistry
Polyethylene / chemistry*
Silicon Compounds / chemistry*
Surface Properties

Substances

Carbon Compounds, Inorganic
Silicon Compounds
Polyethylene
silicon carbide