Polarimetric Three-Dimensional Topological Insulators/Organics Thin Film Heterojunction Photodetectors

Ming Yang; Jun Wang; Yafei Zhao; Liang He; Chunhui Ji; Hongxi Zhou; Jun Gou; Weizhi Li; Zhiming Wu; Xinran Wang

doi:10.1021/acsnano.9b05775

Polarimetric Three-Dimensional Topological Insulators/Organics Thin Film Heterojunction Photodetectors

ACS Nano. 2019 Sep 24;13(9):10810-10817. doi: 10.1021/acsnano.9b05775. Epub 2019 Sep 12.

Authors

Ming Yang¹, Jun Wang^{1

2}, Yafei Zhao³, Liang He³, Chunhui Ji¹, Hongxi Zhou¹, Jun Gou^{1

2}, Weizhi Li^{1

2}, Zhiming Wu^{1

2}, Xinran Wang³

Affiliations

¹ School of Optoelectronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , P.R. China.
² State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu 610054 , P.R. China.
³ National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , P.R. China.

PMID: 31498592
DOI: 10.1021/acsnano.9b05775

Abstract

As a state of quantum matter with insulating bulk and gapless surface states, topological insulators (TIs) have huge potential in optoelectronic devices. On the other hand, polarization resolution photoelectric devices based on anisotropic materials have overwhelming advantages in practical applications. In this work, the 3D TIs Bi₂Te₃/organics thin film heterojunction polarimetric photodetectors with high anisotropic mobility ratio, fast response time, high responsivity, and EQE in broadband spectra are presented. At first, the maximum anisotropic mobility ratio of the Bi₂Te₃/organics thin film can reach 2.56, which proves that Bi₂Te₃ can serve as a sensitive material for manufacturing polarization photoelectric devices. Moreover, it is found that the device can exhibit a broad bandwidth and ultrahigh response photocurrent from visible to middle wave infrared spectra (405-3500 nm). The highest responsivity (R_i) of optimized devices can reach up to 23.54 AW^-1; surprisingly, the R_i of the device can still reach 1.93 AW^-1 at 3500 nm. In addition, the ultrahigh external quantum efficiency is 4534% with a fast response time (1.42 ms). Excellent properties mentioned above indicate that TIs/organics heterojunction devices are suitable for manufacturing high-performance photoelectric devices in infrared region.

Keywords: Bi2Te3 thin film; MWIR photodetectors; inorganics/organics heterojunction; photodetector; polarization resolved.