Indistinguishable Photons from Deterministically Integrated Single Quantum Dots in Heterogeneous GaAs/Si3N4 Quantum Photonic Circuits

Nano Lett. 2019 Oct 9;19(10):7164-7172. doi: 10.1021/acs.nanolett.9b02758. Epub 2019 Sep 13.

Abstract

Silicon photonics enables scaling of quantum photonic systems by allowing the creation of extensive, low-loss, reconfigurable networks linking various functional on-chip elements. Inclusion of single quantum emitters onto photonic circuits, acting as on-demand sources of indistinguishable photons or single-photon nonlinearities, may enable large-scale chip-based quantum photonic circuits and networks. Toward this, we use low-temperature in situ electron-beam lithography to deterministically produce hybrid GaAs/Si3N4 photonic devices containing single InAs quantum dots precisely located inside nanophotonic structures, which act as efficient, Si3N4 waveguide-coupled on-chip, on-demand single-photon sources. The precise positioning afforded by our scalable fabrication method furthermore allows observation of postselected indistinguishable photons. This indicates a promising path toward significant scaling of chip-based quantum photonics, enabled by large fluxes of indistinguishable single-photons produced on-demand, directly on-chip.

Keywords: Quantum dots; deterministic sample fabrication; hybrid devices; indistinguishable photons; quantum optics.

Publication types

  • Research Support, Non-U.S. Gov't