Erratum: High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an In _x Al_{1- x} Sb Continuously Graded Buffer Layer

ACS Omega. 2018 Dec 6;3(12):16805. doi: 10.1021/acsomega.8b03172. eCollection 2018 Dec 31.

Authors

Soo Seok Kang^{1

2}, Suk In Park¹, Sang Hoon Shin¹, Cheol-Hwee Shim¹, Suk-Ho Choi², Jin Dong Song¹

Affiliations

¹ Center for Optoelectronic Material and Devices and Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea.
² Department of Applied Physics and Institute of Natural Sciences, College of Applied Science, Kyung Hee University, Yongin 446-701, Republic of Korea.

Abstract

[This corrects the article DOI: 10.1021/acsomega.8b02189.].

Publication types

Published Erratum