Nonvolatile Memory Device Based on Copper Polyphthalocyanine Thin Films

Xianfei Guo; Jie Liu; Lili Cao; Qiu Liang; Shengbin Lei

doi:10.1021/acsomega.9b01224

Nonvolatile Memory Device Based on Copper Polyphthalocyanine Thin Films

ACS Omega. 2019 Jun 17;4(6):10419-10423. doi: 10.1021/acsomega.9b01224. eCollection 2019 Jun 30.

Authors

Xianfei Guo¹, Jie Liu¹, Lili Cao¹, Qiu Liang¹, Shengbin Lei¹

Affiliation

¹ Department of Chemistry, School of Science & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), and Tianjin Key Laboratory of Molecular Optoelectronic Science, Tianjin University, Tianjin 300072, P. R. China.

Abstract

In this work, we report the fabrication of nonvolatile memory devices based on chemical vapor deposition-grown copper polyphthalocyanine (CuPPc) thin films. The high polymerization degree and crystallinity of the as-obtained films were confirmed by transmission electron microscopy, X-ray photoelectron spectroscopy, and UV-vis studies. It was found that the device with Au/CuPPc/indium tin oxide sandwich structure exhibits good nonvolatile memory performance with a large ON/OFF current ratio of 10³ and long retention time of 1.2 × 10³ s.