High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an In x Al1- x Sb Continuously Graded Buffer Layer

Soo Seok Kang; Suk In Park; Sang Hoon Shin; Cheol-Hwee Shim; Suk-Ho Choi; Jin Dong Song

doi:10.1021/acsomega.8b02189

High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an In _x Al_{1- x} Sb Continuously Graded Buffer Layer

ACS Omega. 2018 Nov 1;3(11):14562-14566. doi: 10.1021/acsomega.8b02189. eCollection 2018 Nov 30.

Authors

Soo Seok Kang^{1

2}, Suk In Park¹, Sang Hoon Shin¹, Cheol-Hwee Shim¹, Suk-Ho Choi², Jin Dong Song²

Affiliations

¹ Center for Opto-Electronic Material and Devices and Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea.
² Department of Applied Physics and Institute of Natural Sciences, College of Applied Science, Kyung Hee University, Yongin 446-701, Republic of Korea.

Abstract

In this paper, we report the growth of a high-quality 100 nm thick InSb layer on a (001) GaAs substrate for InSb-based high-speed electronic device applications. A continuously graded buffer (CGB) technique with In _x Al_1-x Sb was used to grow high-quality InSb films on GaAs substrates. The CGB layer was grown by continuously changing the growth temperature and composition of the aluminum and indium during the growth of the buffer layer. Degradation of electrical properties, which normally accompany carrier-defect scattering in a heteroepitaxial layer, was minimized by using the CGB layer. The electrical properties of the InSb films were characterized by Hall measurements, and the electron mobility of the 100 nm-thick InSb film had the largest value, of 39 290 cm²/V·s, among reports of similar thickness. To investigate the relationship between electrical and structural properties, the 100 nm thick InSb film was characterized by energy-dispersive spectroscopy and transmission electron microscopy.