Crystal Structure, Infrared Spectra, and Microwave Dielectric Properties of Temperature-Stable Zircon-Type (Y,Bi)VO4 Solid-Solution Ceramics

Di Zhou; Jing Li; Li-Xia Pang; Guo-Hua Chen; Ze-Ming Qi; Da-Wei Wang; Ian M Reaney

doi:10.1021/acsomega.6b00274

Crystal Structure, Infrared Spectra, and Microwave Dielectric Properties of Temperature-Stable Zircon-Type (Y,Bi)VO₄ Solid-Solution Ceramics

ACS Omega. 2016 Nov 18;1(5):963-970. doi: 10.1021/acsomega.6b00274. eCollection 2016 Nov 30.

Authors

Di Zhou^{1

2}, Jing Li¹, Li-Xia Pang^{2

3}, Guo-Hua Chen⁴, Ze-Ming Qi⁵, Da-Wei Wang², Ian M Reaney²

Affiliations

¹ Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, China.
² Department of Materials Science and Engineering, University of Sheffield, Sheffield S1 3JD, U.K.
³ Micro-optoelectronic Systems Laboratories, Xi'an Technological University, Xi'an 710032, Shaanxi, China.
⁴ Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, Guangxi, China.
⁵ National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, China.

Abstract

A series of (Bi_1-x Y _x )VO₄ (0.4 ≤ x ≤ 1.0) ceramics were synthesized using the traditional solid-state reaction method. In the composition range of 0.4 ≤ x ≤ 1.0, a zircon-type solid solution was formed between 900 and 1550 °C. Combined with our previous work (scheelite monoclinic and zircon-type phases coexist in the range of x < 0.40), a pseudobinary phase diagram of BiVO₄-YVO₄ is presented. As x decreased from 1.0 to 0.40, the microwave permittivity (ε_r) of (Bi_1-x Y _x )VO₄ ceramics increased linearly from 11.03 to 30.9, coincident with an increase in the temperature coefficient of resonant frequency (TCF) from -61.3 to +103 ppm/°C. Excellent microwave dielectric properties were obtained for (Bi_0.3Y_0.7)VO₄ sintered at 1025 °C and (Bi_0.2Y_0.8)VO₄ sintered at 1075 °C with ε_r ∼ 19.35, microwave quality factor (Qf) ∼ 25 760 GHz, and TCF ∼ +17.8 ppm/°C and ε_r ∼ 16.3, Qf ∼ 31 100 GHz, and TCF ∼ -11.9 ppm/°C, respectively. Raman spectra, Shannon's additive rule, a classical oscillator model, and far-infrared spectra were employed to study the structure-property relations in detail. All evidence supported the premise that Bi-based vibrations dominate the dielectric permittivity in the microwave region.