Two-Dimensional WSe2/Organic Acceptor Hybrid Nonvolatile Memory Devices Based on Interface Charge Trapping

Haining Liu; Menghua Cui; Chunhe Dang; Wen Wen; Xinsheng Wang; Liming Xie

doi:10.1021/acsami.9b11998

Two-Dimensional WSe₂/Organic Acceptor Hybrid Nonvolatile Memory Devices Based on Interface Charge Trapping

ACS Appl Mater Interfaces. 2019 Sep 18;11(37):34424-34429. doi: 10.1021/acsami.9b11998. Epub 2019 Sep 6.

Authors

Haining Liu^{1

2}, Menghua Cui^{1

2}, Chunhe Dang^{1

2}, Wen Wen^{1

2}, Xinsheng Wang¹, Liming Xie^{1

2}

Affiliations

¹ CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience , National Center for Nanoscience and Technology , Beijing 100190 , P. R. China.
² University of Chinese Academy of Sciences , Beijing 100049 , P. R. China.

PMID: 31448585
DOI: 10.1021/acsami.9b11998

Abstract

Two-dimensional (2D) materials, with atomic thickness and unique electronic structure, hold great potentials in electronic device applications. Charge transfer at the interface of 2D materials further provides a versatile platform for applications in electronics. Here, we report nonvolatile memory devices based on interface charge trapping between 2D WSe₂ and organic electron acceptors. The 2D WSe₂-organic acceptor hybrid structure exhibits a high storage performance, such as large gate memory windows, high on/off ratios (>10³), and long retention time (>1000 s). Further analysis revealed that organic acceptors with a stronger electron affinity (i.e., higher redox potential) have a larger electron-trapping ability and hence a better memory performance.

Keywords: WSe; electron acceptor; interface charge transfer; nonvolatile memory; two-dimensional material.