Fabrication and Characteristics of Heavily Fe-Doped LiNbO3/Si Heterojunction

Wencan Li; Jiao Cui; Dahuai Zheng; Weiwei Wang; Shuolin Wang; Shaoqing Song; Hongde Liu; Yongfa Kong; Jingjun Xu

doi:10.3390/ma12172659

Fabrication and Characteristics of Heavily Fe-Doped LiNbO₃/Si Heterojunction

Materials (Basel). 2019 Aug 21;12(17):2659. doi: 10.3390/ma12172659.

Authors

Wencan Li¹, Jiao Cui¹, Dahuai Zheng², Weiwei Wang³, Shuolin Wang³, Shaoqing Song³, Hongde Liu³, Yongfa Kong^{4

5}, Jingjun Xu^{1

3}

Affiliations

¹ The MOE Key Laboratory of Weak-Light Nonlinear Photonics and TEDA Institute of Applied Physics, Nankai University, Tianjin 300457, China.
² The MOE Key Laboratory of Weak-Light Nonlinear Photonics and TEDA Institute of Applied Physics, Nankai University, Tianjin 300457, China. dhzheng@nankai.edu.cn.
³ School of Physics, Nankai University, Tianjin 300071, China.
⁴ The MOE Key Laboratory of Weak-Light Nonlinear Photonics and TEDA Institute of Applied Physics, Nankai University, Tianjin 300457, China. kongyf@nankai.edu.cn.
⁵ School of Physics, Nankai University, Tianjin 300071, China. kongyf@nankai.edu.cn.

Abstract

A series of heavily Fe-doped LiNbO₃ (LN:Fe) crystals were grown via the Czochralski method. The dark- and photo-conductivity of the 5.0 wt.% Fe-doped LiNbO₃ crystal reached 3.30 × 10^-8 Ω^-1 cm^-1 and 1.46 × 10^-7 Ω^-1 cm^-1 at 473 nm, which are about 7 and 5 orders of magnitude higher than that of congruent LiNbO₃, respectively. Then, a p-n heterojunction was fabricated by depositing the heavily Fe-doped LiNbO₃ on a p-type Si substrate using the pulsed laser deposition. The current-voltage curve of the LN:Fe/Si heterojunction presents a well-defined behavior with a turn-on voltage of 2.9 V. This LN:Fe/Si heterojunction gives an excellent prototype device for integrated optics and electro-photonics.

Keywords: conductivity; heavily Fe-doped; heterojunction; pulsed laser deposition.

Abstract

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