Crystal structure and electrical resistance property of Rb0.21(H2O) y WS2

Yuanlv Mao; Yuqiang Fang; Dong Wang; Kejun Bu; Sishun Wang; Wei Zhao; Fuqiang Huang

doi:10.1107/S2056989019007941

Crystal structure and electrical resistance property of Rb_0.21(H₂O) _y WS₂

Acta Crystallogr E Crystallogr Commun. 2019 Jun 11;75(Pt 7):976-979. doi: 10.1107/S2056989019007941. eCollection 2019 Jul 1.

Authors

Yuanlv Mao¹, Yuqiang Fang¹, Dong Wang¹, Kejun Bu¹, Sishun Wang², Wei Zhao¹, Fuqiang Huang¹

Affiliations

¹ State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.
² School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China.

Abstract

Rb_0.21(H₂O) _y WS₂, rubidium hydrate di-thio-tungstate, is a new quasi two-dimensional sulfide. Its crystal structure consists of ordered WS₂ layers, separated by disordered Rb⁺ ions and water mol-ecules. All atomic sites are located on mirror planes. The WS₂ layers are composed of edge-sharing [WS₆] octa-hedra and extend parallel to (001). The presence of structural water was revealed by thermogravimetry, but the position and exact amount could not be determined in the present study. The temperature dependence of the electrical resistance indicates that Rb_0.21(H₂O) _y WS₂ is semiconducting between 80-300 K.

Keywords: crystal structure; disorder; electric properties; quasi two-dimensional structure.

Grants and funding

This work was funded by National Key Research and Development Program (China) grant 2016YFB0901600. National Natural Science Foundation of China grant No. 21871008. Science and Technology Commission of Shanghai Municipality grants 16ZR1440500 and 16JC1401700. Key Research Program of the Chinese Academy of Sciences grants QYZDJ-SSW-JSC013 and KGZD-EW-T06. CAS Center for Excellence in Superconducting Electronics grant .