Broadband THz to NIR up-converter for photon-type THz imaging

Peng Bai; Yueheng Zhang; Tianmeng Wang; Zhanglong Fu; Dixiang Shao; Ziping Li; Wenjian Wan; Hua Li; Juncheng Cao; Xuguang Guo; Wenzhong Shen

doi:10.1038/s41467-019-11465-6

Broadband THz to NIR up-converter for photon-type THz imaging

Nat Commun. 2019 Aug 5;10(1):3513. doi: 10.1038/s41467-019-11465-6.

Authors

Peng Bai^{1

2}, Yueheng Zhang^{3

4}, Tianmeng Wang^{1

5}, Zhanglong Fu⁶, Dixiang Shao⁶, Ziping Li⁶, Wenjian Wan⁶, Hua Li⁶, Juncheng Cao⁶, Xuguang Guo⁷, Wenzhong Shen^{1

2}

Affiliations

¹ Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University, 200240, Shanghai, China.
² Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China.
³ Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University, 200240, Shanghai, China. yuehzhang@sjtu.edu.cn.
⁴ Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China. yuehzhang@sjtu.edu.cn.
⁵ Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA.
⁶ Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China.
⁷ School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, 200093, Shanghai, China.

Abstract

High performance terahertz imaging devices have drawn wide attention due to their significant application in healthcare, security of food and medicine, and nondestructive inspection, as well as national security applications. Here we demonstrate a broadband terahertz photon-type up-conversion imaging device, operating around the liquid helium temperature, based on the gallium arsenide homojunction interfacial workfunction internal photoemission (HIWIP)-detector-LED up-converter and silicon CCD. Such an imaging device achieves broadband response in 4.2-20 THz and can absorb the normal incident light. The peak responsivity is 0.5 AW^-1. The light emitting diode leads to a 72.5% external quantum efficiency improvement compared with the one widely used in conventional up-conversion devices. A peak up-conversion efficiency of 1.14 × 10^-2 is realized and the optimal noise equivalent power is 29.1 pWHz^-1/2. The up-conversion imaging for a 1000 K blackbody pin-hole is demonstrated. This work provides a different imaging scheme in the terahertz band.

Publication types

Research Support, Non-U.S. Gov't