Influence of Oxygen Partial Pressure on Radio Frequency Magnetron Sputtered Amorphous InZnSnO Thin Film Transistors

Annisa Dwi Lestari; Maryane Putri; Young-Woo Heo; Hee Young Lee

doi:10.1166/jnn.2020.17222

Influence of Oxygen Partial Pressure on Radio Frequency Magnetron Sputtered Amorphous InZnSnO Thin Film Transistors

J Nanosci Nanotechnol. 2020 Jan 1;20(1):252-256. doi: 10.1166/jnn.2020.17222.

Authors

Annisa Dwi Lestari¹, Maryane Putri¹, Young-Woo Heo², Hee Young Lee¹

Affiliations

¹ School of Materials Science and Engineering, Yeungnam University, Gyeongsan 38541, Korea.
² School of Materials Science and Engineering, Kyungpook National University, Daegu 41566, Korea.

PMID: 31383163
DOI: 10.1166/jnn.2020.17222

Abstract

Amorphous oxide semiconductors (AOS) have been studied extensively for the past decade as a possible alternative to polysilicon thin film transistors (TFTs). One such example is amorphous InZnSnO (IZTO), which was used in this study as an active channel layer for TFTs. A 30 nm-thick IZTO film was deposited using RF magnetron sputtering with various oxygen partial pressures, followed by annealing treatment in air at 350 °C. The resulting films showed good optical properties with high transparency of >85% in the visible spectrum, which is important for realizing transparent devices. The amorphous IZTO TFT device showed good performance with a field-effect mobility (μ_FE) of 29.1 cm²/Vs, threshold voltage (V_T) of 0.70 V, on/off current ratio (I_on/I_off) of ~10⁸, and subthreshold swing (SS) value of 0.12 V/dec. Oxygen incorporation during deposition of the channel layer affected the overall electrical properties of the TFTs, which is associated with the change of interface trap density.