Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays

Ha Quoc Thang Bui; Ravi Teja Velpula; Barsha Jain; Omar Hamed Aref; Hoang-Duy Nguyen; Trupti Ranjan Lenka; Hieu Pham Trung Nguyen

doi:10.3390/mi10080492

Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays

Micromachines (Basel). 2019 Jul 24;10(8):492. doi: 10.3390/mi10080492.

Authors

Ha Quoc Thang Bui^{1

2}, Ravi Teja Velpula¹, Barsha Jain¹, Omar Hamed Aref¹, Hoang-Duy Nguyen³, Trupti Ranjan Lenka⁴, Hieu Pham Trung Nguyen⁵

Affiliations

¹ Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102, USA.
² Department of Biomedical Physics, Pham Ngoc Thach University of Medicine, Ho Chi Minh City 700000, Vietnam.
³ Institute of Chemical Technology, Vietnam Academy of Science and Technology, 1 Mac Dinh Chi Street, District 1, Ho Chi Minh City 700000, Vietnam. nhduy@iams.vast.vn.
⁴ Department of Electronics & Communication Engineering, National Institute of Technology Silchar, Assam 788010, India.
⁵ Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102, USA. hieu.p.nguyen@njit.edu.

Abstract

We have demonstrated full-color and white-color micro light-emitting diodes (μLEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy. InGaN/AlGaN core-shell nanowire μLED arrays were fabricated with their wavelengths tunable from blue to red by controlling the indium composition in the device active regions. Moreover, our fabricated phosphor-free white-color μLEDs demonstrate strong and highly stable white-light emission with high color rendering index of ~ 94. The μLEDs are in circular shapes with the diameter varying from 30 to 100 μm. Such high-performance μLEDs are perfectly suitable for the next generation of high-resolution micro-display applications.

Keywords: GaN nanowires; core-shell structure; μLED displays; μLEDs.

Abstract

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