Zero-dimensional-two-dimensional (0D-2D) hybrid optoelectronic devices have demonstrated high sensitivity and high performance due to the high absorption coefficient of 0D materials with a tunable detection range and a high carrier transport property of 2D materials. However, the reported 0D-2D hybrid devices employ toxic nanomaterials as sensitizing layers, which can limit the practical applications. In this study, we first fabricated the 0D-2D hybrid photodetector using nontoxic InP quantum dots (QDs) as a light-absorbing layer and black phosphorus (BP) as a transport layer. The surface treatment using 1,2-ethanedithiol and thermal treatment were carried out to remove the surface long ligands of colloidal QDs, which can accelerate the charge injection of the photogenerated carriers through the interfaces between InP QDs and BP. The InP QDs/BP hybrid photodetector demonstrates a high responsivity of 1 × 109 A/W and detectivity of 4.5 × 1016 Jones at 0.05 μW cm-2 under 405 nm illumination. The results show that 0D-2D hybrid photodetectors based on III-V semiconducting QD materials can be optimized for high-performance photodetectors.
Keywords: 0D−2D hybrid device; black phosphorus; indium phosphide; photodetector; surface ligands.