Neuromorphic devices and systems with ultralow power consumption are important in building artificial intelligent systems. Here, indium tin oxide (ITO)-based oxide neuromorphic transistors are fabricated using poly(vinyl alcohol) (PVA)-based proton-conducting electrolytes as gate dielectrics. The electrical performances of the transistors can be modulated with the ITO channel thickness. Fundamental synaptic functions, including excitatory postsynaptic current, paired-pulse facilitation, and multistore memory, are successfully emulated. Most importantly, the PVA-gated neuromorphic devices demonstrate ultralow energy consumption of ∼1.16 fJ with ultrahigh sensitivity of ∼5.4 dB, as is very important for neuromorphic engineering applications. Because of the inherent environmental-friendly characteristics of PVA, the devices possess security biocompatibility. Thus, the proposed PVA-gated oxide neuromorphic transistors may find potential applications in "green" ultrasensitive neuromorphic systems and efficient electronic biological interfaces.
Keywords: electrical double layer; neuromorphic platforms; oxide neuromorphic transistors; ultrahigh sensitivity; ultralow power consumption.