Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

Philipp Schuh; Francesco la Via; Marco Mauceri; Marcin Zielinski; Peter J Wellmann

doi:10.3390/ma12132179

Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

Materials (Basel). 2019 Jul 6;12(13):2179. doi: 10.3390/ma12132179.

Authors

Philipp Schuh¹, Francesco la Via², Marco Mauceri³, Marcin Zielinski⁴, Peter J Wellmann⁵

Affiliations

¹ Crystal Growth Lab, Materials Department 6 (i-meet), FAU Erlangen-Nuremberg, Martensstr. 7, D-91058 Erlangen, Germany.
² CNR-IMM, sezione di Catania, Stradale Primosole 50, I-95121 Catania, Italy.
³ LPE S.P.A., Sedicesima Strada, I-95121 Catania, Italy.
⁴ NOVASiC, Savoie Technolac, BP267, F-73375 Le Bourget-du-Lac Cedex, France.
⁵ Crystal Growth Lab, Materials Department 6 (i-meet), FAU Erlangen-Nuremberg, Martensstr. 7, D-91058 Erlangen, Germany. Peter.Wellmann@fau.de.

Abstract

We report on the reproducible growth of two inch 3C-SiC crystals using the transfer of chemical vapor deposition (CVD)-grown (100) oriented epitaxial layers. Additional experiments, in which the diameter of the free-standing layers is increased, are presented, indicating the upscale potential of this process. The nucleation and growth of cubic silicon carbide is supported by XRD and Raman measurements. The rocking curve data yield a full-width-at-half-maximum (FWHM) between 138 to 140 arc sec for such grown material. Analysis of the inbuilt stress of the bulk-like material shows no indications of any residual stress.

Keywords: 3C-SiC; PVT; bulk; large area; stress-free; sublimation sandwich.

Grants and funding

720827/Horizon 2020